1n916 1n916 a 1n916 b absolute maximum ratings (t a = 25 o c) parameter symbol value unit maximum repetitive reverse voltage v rrm 100 v average rectified current i f(av) 200 ma peak forward surge current at t = 1 s at t = 1 s i fsm 1 4 a total power dissipation p tot 500 mw junction temperature t j 175 o c storage temperature range t stg - 65 to + 200 o c characteristics at t a = 25 o c parameter symbol min. max. unit reverse breakdown voltage at i r = 100 a at i r = 5 a v (br)r 100 75 - - v reverse current at v r = 20 v at v r = 75 v at v r = 20 v, t j = 150 o c i r - - - 25 5 50 na a a forward voltage at i f = 5 ma at i f = 10 ma at i f = 20 ma at i f = 30 ma 1N916B 1n916 1n916a 1N916B v f v f v f v f 0.63 - - - 0.73 1 1 1 v v v v total capacitance at v r = 0, f = 1 mhz c t - 2 pf reverse recov ery time at i f = 10 ma, v r = 6 v (60 ma), i rr = 1 ma, r l = 100 ? t rr - 4 ns max. 3.9 max. 1 .9 glass ca se d o-35 max. 0.5 min. 27. 5 min. 27. 5 xxx cathod e band part no. dimensio n s in mm black bl ack silicon epitaxial planar switching diode features ? fast switching speed ? high reliability z ibo seno electronic engineering co., ltd. 1 of 2 www.senocn.com 1n916 1n916 a 1n916 b a l l d a t a s h e e t
capaci tance vs reverse voltage v r=0. 0 to 15 v rev e rse voltage (v) 14 ta=25 c c a p a c i t a n c e ( p f ) 0 0.8 0. 75 0. 9 0.85 4 261 0 81 2 o ta=25 c reve rse recovery time vs reverse current 60 r e v e r s e r e c o v e r y ( n s ) 1 10 3 2 4 re ver se current (ma) i f =10ma- i rr =1.0m a -rl oo p =100 ohm s 20 30 40 50 o 1.5 2.5 3.5 re ve rse voltage vs reverse current bv-1.0 to 100 ua v r - r e v e r s e v o l t a g e ( v ) 1 2 3 5 10 20 30 50 100 110 120 130 140 150 160 i r -r everse current (ua) ta=-40 c o ta=+25 c o ta=25 c o ta= + 65 c o ta=25 c o 300 v f - f o r w a r d v o l t a g e ( m v ) 250 i f -for ward current (u a) 2 13 5 10 20 30 50 100 forwar d v oltage vs forward current v f -1 to 100 ua 350 400 45 0 500 o ta=25 c forwar d v oltage vs forward current v f -10 to 80 0 ma i f -for ward current (m a) ta=25 c 1 v f - f o r w a r d v o l t a g e ( v ) 0.6 10 0.8 1.6 1.2 1.4 3020 50 100 200 300 o 500 550 i f -forward c u rrent (ma) forwar d v oltage vs forward current v f -0 .1 to 100 ma ta=25 c v f - f o r w a r d v o l t a g e ( m v ) 500 450 0.1 550 750 650 600 700 0. 3 0. 2 0.5 1 2 3 o 10 5 v r -r everse voltage (v) reve rse current vs reverse voltage i r -10 to 100 v 100 i r - r e v e r s e c u r r e n t ( n a ) 10 40 0 60 80 120 20 30 5 0 100 70 20 g eneral rule:the reverse current of a diode will approximately double for every ten (10) degree c increase in temperature forwar d voltage vs ambient temperature v f -0.01 - 20 ma (-40 to+65 deg c) i f -for ward current (m a) 300 v f - f o r w a r d v o l t a g e ( v ) 400 0.01 600 500 700 900 800 0.1 0.03 0.3 3 11 0 typical z ibo seno electronic engineering co., ltd. 2 of 2 www.senocn.com 1n916 1n916 a 1n916 b 1n916 1n916 a 1n916 b a l l d a t a s h e e t
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